inchange semiconductor isc product specification isc silicon pnp darlington power transistor BD650 description collector-emitter breakdown voltage- : v (br)ceo = -100v(min) high dc current gain : h fe = 750(min) @i c = -3a low saturation voltage complement to type bd649 applications designed for use as complementary af push-pull output stage applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i cp collector current-peak -12 a i b b base current-continuous -0.3 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 62.5 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BD650 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter breakdown voltage i c = -30ma; i b = 0 -100 v v ce( sat )-1 collector-emitter saturation voltage i c = -3a; i b = -12ma b -2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = -5a; i b = -50ma b -2.5 v v be( sat ) base-emitter saturation voltage i c = -5a; i b = -50ma b -3.0 v v be( on ) base-emitter on voltage i c = -3a ; v ce = -3v -2.5 v v cb = -100v; i e = 0 -0.2 i cbo collector cutoff current v cb = -60v; i e = 0; t c = 150 -2.0 ma i ceo collector cutoff current v ce = -50v; i b = 0 b -0.5 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -5 ma h fe dc current gain i c = -3a ; v ce = -3v 750 isc website www.iscsemi.cn 2
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